ohmic resistance

英

美

欧姆律电阻

计算机

英英释义

noun

• a material's opposition to the flow of electric current
  Synonym:electric resistanceelectrical resistanceimpedanceresistanceresistivity

双语例句

• AC impedance measurements demonstrated that the ohmic resistance of the electrolyte as well as the charge transfer resistance of the electrode/ electrolyte interface increases with ethanol content increasing.
  交流阻抗测试表明，溶液的欧姆电阻以及电极/电解质界面的电荷转移电阻随溶液中乙醇含量的增加而增大；随着充放电循环的进行，电极/电解质界面的电荷转移电阻增大，电极的活性降低。
• Study on Increase in the Ohmic Resistance of a Conducting Plate with a Sharply Changing Width
  窄式陡变宽度导板电阻增量研究
• Howevers, there are significant barriers to intermediate temperature SOFC: electrolyte ohmic resistance and electrode overpotential, especially cathode overpotential.
  但随着工作温度的降低，电解质欧姆电阻和电极极化电阻增大，而阴极的极化电阻增大尤为明显。
• In order to make the application in the device better, the ohmic contact with low resistance between the electrode and p-type and n-type ZnO films needs to be studied and prepared.
  为了更好的实现其在器件方面的应用，需研究制备出适合于p型和n型ZnO薄膜的低阻欧姆接触电极。
• The back ohmic contact of the aluminum back surface field ( Al-BSF) of crystalline silicon solar cells greatly impacts the output properties of solar cells. And so it is imperative to improve the back ohmic contact property by novel technology in order to reduce the series resistance.
  单晶硅太阳电池铝背场的欧姆接触影响其输出特性，采用新的工艺技术降低电池的串联电阻势在必行。
• Study on the Ohmic Contact Resistance of n-type 3C-SiC Grown on Si Substrate
  Si上外延的n型3C-SiC欧姆接触研究
• Research on INS/ APS Kalman Filter based on APS Interpolation Data Correction Algorithm for Submarine Estimating ohmic resistance of PEMFC based on double Kalman filters
  基于内差修正数据INS/APS卡尔曼滤波器组合定位应用双卡尔曼滤波算法估计燃料电池欧姆内阻
• A Theoretical Study on the Ohmic Resistance R of Zn& Cu Cells with Spherical Electrodes
  关于球形电极Zn&Cu电池的Ohmic电阻和Joule热电阻的理论研究
• The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
  溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
• When SiC devices operate at the high temperature and high power, thermodynamically stable ohmic contacts with low specific contact resistance are important, since parasitic resistances generally limit or even jeopardize device operation.
  对于器件的欧姆接触，低比接触电阻和高稳定性是决定器件性能的两个重要因素。